BYT56M [BL Galaxy Electrical]

HIGH EFFICIENCY ECTIFIERS; 高效率ECTIFIERS


型号：	BYT56M
厂家：	BL Galaxy Electrical
描述：	HIGH EFFICIENCY ECTIFIERS 高效率ECTIFIERS 二极管功效
文件：	总2页 (文件大小：92K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

GALAXY ELECTRICAL

BYT56A(Z)--- BYT56M(Z)

VOLTAGE RANGE: 50 --- 1000 V

CURRENT: 3.0 A

HIGH EFFICIENCY ECTIFIERS

FEATURES

Fast recovery times

DO - 27

Ul 90V0 flame retardant epoxymolding compound

Diffused junction

Low cost

High surge current capability

Bevel round chip, aualanche operation

MECHANICAL DATA

Case:JEDEC DO--27,molded plastic

Terminals: Axial lead ,solderable per

MIL- STD-202,Method 208

Polarity: Color band denotes cathode

Weight: 0.041 ounces,1.15 grams

Mounting position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by20%.

BYT

56A

BYT

56B

BYT

56D

BYT

56G

BYT

56J

BYT

56K

BYT

56M

UNITS

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximumrecurrent peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

MaximumDC blocking voltage

100

1000

Maximumaverage forw ard rectified current

3.0

I_F(AV)

9.5mmlead length,

@T_A=75

Peak forw ard surge current

8.3ms single half-sine-w ave

I_FSM

150.0

1.4

superimposed on rated load @T =125

Maximuminstantaneous forw ard voltage

@ 3.0A

V_F

I_R

Maximumreverse current

@T_A=25

10.0

150.0

100

at rated DC blocking voltage @T_A=100

Maximum r everse rec over y time (Note1)

t_rr

C_J

Typical junction capacitance

Typical thermal resistance

(Note2)

(Note3)

/ W

R_θ_JA

Operating junction temperature range

- 55 ---- + 150

Storage temperature range

T_STG

NOTE: 1. Measured with I_F=0.5A, I_R=1A, I_rr=0.25A.

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2. Measured at 1.0MH

and applied reverse voltage of 4.0V DC.

3. Thermal resistance from junction to ambient.

Document Number 0262025

BLGALAXY ELECTRICAL

RATINGS AND CHARACTERISTIC CURVES

BYT56A(Z)--- BYT56M(Z)

FIG.1 --TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC

t^rr

N 1.

+0.5A

D.U.T.

(+)

PULSE

(+)

GENERATOR

(NOTE2)

25VDC

(approx)

(-)

-0.25A

OSCILLOSCOPE

(NOTE1)

(-)

NONIN-

DUCTIVE

-1.0A

1cm

NOTES:1.RISETIME=7ns MAX.INPUT IMPEDANCE=1MΩ.22pF

2.RISETIME=10ns MAX.source IMPEDANCE=50Ω.

SET TIMEBASEFOR20/30 ns/cm

FIG.2 -- TYPICAL JUNCTION CAPACTTANCE

FIG.3 --PEAK FORWARD SURGE CURRENT

200

BYT56J - BYT56M

200

100

TJ=25

8.3 ms Single half sine wave

150

BYT56A - BYT56G

T^J=25

100

.2 .4

1.0

140

100

1000

REVERSE VOLTAGE,VOLTS

NUMBEROF CYCLES AT60Hz

FIG.4 -- TYPICAL FORWARD CURRENT

DERATINGCURVE

FIG.5--TYPICAL FORWARD CHARACTERISTIC

100

Sigle phase half

w ave 60 H z

R esistive or

TJ=25

Inductive load

Pulse Width=300

0.1

0.01

0.4 0.6

1.2

1.4 1.6 1.8

100 125

150 175

AMBIENT TEMPERATURE( )

INSTANTANEOUS FORWARD VOLTAGE,VOLTS

www.galaxycn.com

BLGALAXY ELECTRICAL

Document Number 026025

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